Impact of near-surface defects and morphology on ZnO luminescence

被引:22
|
作者
Doutt, D. [1 ]
Mosbacker, H. L.
Cantwell, G. [2 ]
Zhang, J. [2 ]
Song, J. J. [2 ]
Brillson, L. J. [1 ,3 ]
机构
[1] Ohio State Univ, Dept Phys, Dept Elect & Comp Engn, Columbus, OH 43210 USA
[2] ZN Technol Inc, Brea, CA 92821 USA
[3] Ohio State Univ, Ctr Mat Res, Columbus, OH 43210 USA
基金
美国国家科学基金会;
关键词
atomic force microscopy; cathodoluminescence; crystal growth from melt; crystal growth from solution; crystal growth from vapour; II-VI semiconductors; surface morphology; wide band gap semiconductors; zinc compounds;
D O I
10.1063/1.3077015
中图分类号
O59 [应用物理学];
学科分类号
摘要
We have used depth-resolved cathodoluminescence spectroscopy (DRCLS) to measure the distribution of deep level defects at and below the surface of ZnO crystals grown by vapor phase transport, hydrothermal, and melt-growth methods. DRCLS reveals large variations in defect distributions with depth on a nanometer scale that correlate with maps of potential and surface morphology measured by Kelvin probe force and atomic force (AFM) microscopies, respectively. A strong correlation between the optical emission efficiency of the nanoscale subsurface region and the AFM surface roughness reveals a figure of merit for substrate polishing and etching.
引用
收藏
页数:3
相关论文
共 50 条
  • [41] Luminescence properties of defects in ZnO
    Reshchikov, M. A.
    Morkoc, H.
    Nemeth, B.
    Nause, J.
    Xie, J.
    Hertog, B.
    Osinsky, A.
    PHYSICA B-CONDENSED MATTER, 2007, 401 (358-361) : 358 - 361
  • [42] NEAR-SURFACE STRUCTURE DEFECTS OF TUNGSTEN CRYSTALS DUE TO PLATINUM DIFFUSION
    VASILKOVSKII, DN
    ZOTOVA, OB
    FIZIKA TVERDOGO TELA, 1974, 16 (01): : 298 - 301
  • [43] Autoencoder-based detection of near-surface defects in ultrasonic testing
    Ha, Jong Moon
    Seung, Hong Min
    Choi, Wonjae
    ULTRASONICS, 2022, 119
  • [44] NEAR-SURFACE DEFECTS FORMED BY MEV ION-IMPLANTATION INTO SILICON
    SAYAMA, H
    KINOMURA, A
    YUBA, Y
    TAKAI, M
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1993, 80-1 (pt 2): : 587 - 590
  • [45] NEAR-SURFACE DEFECTS IN AMORPHOUS-SEMICONDUCTORS RELATED TO HYDROGEN INCORPORATION
    JIN, S
    ALJISHI, S
    LEY, L
    JOURNAL OF NON-CRYSTALLINE SOLIDS, 1991, 137 : 327 - 330
  • [46] Ultrasonic imaging of near-surface blind defects based on WSAttnGAN network
    Xing, Yuhui
    Zhu, Wenfa
    Xu, Jichao
    Fan, Guopeng
    Qi, Weiwei
    MEASUREMENT, 2025, 245
  • [47] DYNAMIC DRAG OF DISLOCATION BY POINT DEFECTS IN NEAR-SURFACE CRYSTAL LAYER
    Malashenko, V. V.
    MODERN PHYSICS LETTERS B, 2009, 23 (16): : 2041 - 2047
  • [48] ION MILLING OF MAGNETIC OXIDE PLATELETS FOR REMOVAL OF SURFACE AND NEAR-SURFACE IMPERFECTIONS AND DEFECTS
    SCHMIDT, PH
    SPENCER, EG
    WALTERS, EM
    JOURNAL OF APPLIED PHYSICS, 1970, 41 (11) : 4740 - &
  • [49] Optimum surface-passivation schemes for near-surface spin defects in silicon carbide
    Ngomsi, Cyrille Armel Sayou
    Joshi, Tamanna
    Dev, Pratibha
    PHYSICAL REVIEW MATERIALS, 2024, 8 (05):
  • [50] Luminescence of a Near-Surface GaAs/AlAs Heterojunction in AlAs-Based Heterostructures
    Nikiforov, V. E.
    Abramkin, D. S.
    Shamirzaev, T. S.
    SEMICONDUCTORS, 2017, 51 (11) : 1513 - 1516