Impact of near-surface defects and morphology on ZnO luminescence

被引：22
|
作者：
Doutt, D. [1 ]
Mosbacker, H. L.
Cantwell, G. [2 ]
Zhang, J. [2 ]
Song, J. J. [2 ]
Brillson, L. J. [1 ,3 ]
机构：
[1] Ohio State Univ, Dept Phys, Dept Elect & Comp Engn, Columbus, OH 43210 USA
[2] ZN Technol Inc, Brea, CA 92821 USA
[3] Ohio State Univ, Ctr Mat Res, Columbus, OH 43210 USA
来源：
APPLIED PHYSICS LETTERS | 2009年 / 94卷 / 04期
基金：
美国国家科学基金会;
关键词：
atomic force microscopy; cathodoluminescence; crystal growth from melt; crystal growth from solution; crystal growth from vapour; II-VI semiconductors; surface morphology; wide band gap semiconductors; zinc compounds;
D O I：
10.1063/1.3077015
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We have used depth-resolved cathodoluminescence spectroscopy (DRCLS) to measure the distribution of deep level defects at and below the surface of ZnO crystals grown by vapor phase transport, hydrothermal, and melt-growth methods. DRCLS reveals large variations in defect distributions with depth on a nanometer scale that correlate with maps of potential and surface morphology measured by Kelvin probe force and atomic force (AFM) microscopies, respectively. A strong correlation between the optical emission efficiency of the nanoscale subsurface region and the AFM surface roughness reveals a figure of merit for substrate polishing and etching.
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页数：3
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