A micro-power CMOS RF front-end for embedded wireless devices

被引:4
|
作者
Rofougaran, R [1 ]
Lin, TH [1 ]
Newberg, F [1 ]
Kaiser, WJ [1 ]
机构
[1] Univ Calif Los Angeles, Dept Elect Engn, Los Angeles, CA 90095 USA
关键词
D O I
10.1109/RFIC.1999.805230
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Motivated by the emerging needs for low power narrow-band wireless communication systems, the first micro-power RFIC front-end has been designed using weak inversion CMOS techniques. The front-end, a low-noise amplifier (LNA) combined with a down-conversion mixer, has been implemented in a standard 0.8 mu m CMOS process. The front-end supply current is less than 110 mu A at 3V supply bias for operation at 450MHz. High-Q inductors, used in the front-end design, have been manufactured using low-temperature cofired ceramic technology. The front-end's gain is 25dB with an IP3 of -15 dBm. This is the lowest current consumption reported to date for a CMOS front-end operating at this frequency.
引用
收藏
页码:17 / 20
页数:4
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