A micro-power CMOS RF front-end for embedded wireless devices

被引：4

作者：

Rofougaran, R ^{[1
]}

Lin, TH ^{[1
]}

Newberg, F ^{[1
]}

Kaiser, WJ ^{[1
]}

机构：

[1] Univ Calif Los Angeles, Dept Elect Engn, Los Angeles, CA 90095 USA

来源：

1999 IEEE RADIO FREQUENCY INTEGRATED CIRCUITS (RFIC) SYMPOSIUM - DIGEST OF PAPERS | 1999年

关键词：

D O I：

10.1109/RFIC.1999.805230

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Motivated by the emerging needs for low power narrow-band wireless communication systems, the first micro-power RFIC front-end has been designed using weak inversion CMOS techniques. The front-end, a low-noise amplifier (LNA) combined with a down-conversion mixer, has been implemented in a standard 0.8 mu m CMOS process. The front-end supply current is less than 110 mu A at 3V supply bias for operation at 450MHz. High-Q inductors, used in the front-end design, have been manufactured using low-temperature cofired ceramic technology. The front-end's gain is 25dB with an IP3 of -15 dBm. This is the lowest current consumption reported to date for a CMOS front-end operating at this frequency.

引用

页码：17 / 20

页数：4

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