Bulk growth of SiC - review on advances of SiC vapor growth for improved doping and systematic study on dislocation evolution

被引：21

作者：

Sakwe, Sakwe Aloysius ^{[1
]}

Stockmeier, Mathias ^{[2
]}

Hens, Philip ^{[1
]}

Mueller, Ralf ^{[1
]}

Queren, Desiree ^{[1
]}

Kunecke, Ulrike ^{[1
]}

Konias, Katja ^{[2
]}

Hock, Rainer ^{[2
]}

Magerl, Andreas ^{[2
]}

Pons, Michel ^{[3
]}

Winnacker, Albrecht ^{[1
]}

Wellmann, Peter ^{[1
]}

机构：

[1] Univ Erlangen Nurnberg, Inst Mat Sci 6, D-91058 Erlangen, Germany

[2] Univ Erlangen Nurnberg, Inst Crystallog & Struct Phys, D-91058 Erlangen, Germany

[3] Inst Natl Polytech Grenoble, F-38402 Grenoble, France

来源：

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS | 2008年 / 245卷 / 07期

关键词：

D O I：

10.1002/pssb.200743520

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The paper reviews research on advanced crystal growth of SiC. A brief review highlights the benefits of the so called Modified Physical Vapor Transport Technique which uses an additional gas pipe for fine tuning of the growth cell of a conventional Physical Vapor Transport setup with additional gases. Main emphasis, however, will be laid on a systematic dislocation evolution study for various growth parameter sets. Besides doping, growth temperature was considered. Two main results were found: (i) In p-type SiC, irrespective of the incorporation of aluminum or boron acceptors, basal plane dislocations that are harmful for bipolar power devices appear less pronounced or are even absent compared to n-type SiC. (ii) Growth at elevated seed temperature (i.e. 2300 degrees C and higher) is beneficial for low dislocation densities. (C) 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

引用

页码：1239 / 1256

页数：18

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