Bulk growth of SiC - review on advances of SiC vapor growth for improved doping and systematic study on dislocation evolution

被引：21

作者：

Sakwe, Sakwe Aloysius ^{[1
]}

Stockmeier, Mathias ^{[2
]}

Hens, Philip ^{[1
]}

Mueller, Ralf ^{[1
]}

Queren, Desiree ^{[1
]}

Kunecke, Ulrike ^{[1
]}

Konias, Katja ^{[2
]}

Hock, Rainer ^{[2
]}

Magerl, Andreas ^{[2
]}

Pons, Michel ^{[3
]}

Winnacker, Albrecht ^{[1
]}

Wellmann, Peter ^{[1
]}

机构：

[1] Univ Erlangen Nurnberg, Inst Mat Sci 6, D-91058 Erlangen, Germany

[2] Univ Erlangen Nurnberg, Inst Crystallog & Struct Phys, D-91058 Erlangen, Germany

[3] Inst Natl Polytech Grenoble, F-38402 Grenoble, France

来源：

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS | 2008年 / 245卷 / 07期

关键词：

D O I：

10.1002/pssb.200743520

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The paper reviews research on advanced crystal growth of SiC. A brief review highlights the benefits of the so called Modified Physical Vapor Transport Technique which uses an additional gas pipe for fine tuning of the growth cell of a conventional Physical Vapor Transport setup with additional gases. Main emphasis, however, will be laid on a systematic dislocation evolution study for various growth parameter sets. Besides doping, growth temperature was considered. Two main results were found: (i) In p-type SiC, irrespective of the incorporation of aluminum or boron acceptors, basal plane dislocations that are harmful for bipolar power devices appear less pronounced or are even absent compared to n-type SiC. (ii) Growth at elevated seed temperature (i.e. 2300 degrees C and higher) is beneficial for low dislocation densities. (C) 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

引用

页码：1239 / 1256

页数：18

共 50 条

[41] Mass transport and powder source evolution in sublimation growth of SiC bulk crystals
Karpov, D.S.
Bord, O.V.
Karpov, S.Yu.
Zhmakin, A.I.
Ramm, M.S.
Makarov, Yu.N.
Materials Science Forum, 2001, 353-356 : 37 - 40
[42] SiC-bulk growth by physical-vapor transport and its global modelling
Hofmann, D
Eckstein, R
Kolbl, M
Makarov, Y
Muller, SG
Schmitt, E
Winnacker, A
Rupp, R
Stein, R
Volkl, J
JOURNAL OF CRYSTAL GROWTH, 1997, 174 (1-4) : 669 - 674
[43] SIC BOULE GROWTH BY SUBLIMATION VAPOR TRANSPORT
BARRETT, DL
SEIDENSTICKER, RG
GAIDA, W
HOPKINS, RH
CHOYKE, WJ
JOURNAL OF CRYSTAL GROWTH, 1991, 109 (1-4) : 17 - 23
[44] Limitations during Vapor Phase Growth of Bulk (100) 3C-SiC Using 3C-SiC-on-SiC Seeding Stacks
Schuh, Philipp
Steiner, Johannes
La Via, Francesco
Mauceri, Marco
Zielinski, Marcin
Wellmann, Peter J.
MATERIALS, 2019, 12 (15)
[45] Dislocation constraint by etch-back process of seed crystal in SiC bulk crystal growth
Kato, Tomohisa
Oyanagi, Naoki
Kitou, Yasuo
Nishizawa, Shin-Ichi
Arai, Kazuo
Materials Science Forum, 2002, 389-393 (01) : 111 - 114
[46] Dislocation constraint by etch-back process of seed crystal in SiC bulk crystal growth
Kato, T
Oyanagi, N
Kitou, Y
Nishizawa, S
Arai, K
SILICON CARBIDE AND RELATED MATERIALS 2001, PTS 1 AND 2, PROCEEDINGS, 2002, 389-3 : 111 - 114
[47] Dislocation constraint by etch-back process of seed crystal in sic bulk crystal growth
(Trans Tech Publications Ltd): : 389 - 393
[48] STUDY OF THE CONCENTRATION DISTRIBUTION OF SIC VAPOR IN THE CRYSTAL-GROWTH ZONE
LILOV, SK
YANCHEV, IY
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1993, 8 (07) : 1434 - 1437
[49] STUDY OF THE CONCENTRATION DISTRIBUTION OF SIC VAPOR IN THE CRYSTAL-GROWTH ZONE
LILOV, SK
YANCHEV, IY
CRYSTAL RESEARCH AND TECHNOLOGY, 1993, 28 (04) : 495 - 501
[50] STUDY OF THE CONCENTRATION DISTRIBUTION OF SIC VAPOR IN THE CRYSTAL-GROWTH ZONE
LILOV, SK
YANCHEV, IY
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1993, 21 (01): : 83 - 87

← 1 2 3 4 5 →