Temperature effects on MOSFET driving capability and voltage gain

This paper attempts to discuss some important temperature effects on MOSFET analogue applications. For this purpose, measurement data taken over wide ranges of temperature (91-400 K) and channel length (0.35-50 mu m) on MOSFET driving capability, output resistance, and voltage gain are presented. It is shown that low temperature has greater benefit on current driving capability For analogue devices which have longer L and lower V-g values than digital ones. For constant voltage (V-g - Y-t) bias, output resistance and voltage gain drop at flow temperatures. However, under the constant current I-ds bias, considerably higher gain can be achieved at low temperatures.