60GHz-band high-gain MMIC cascode HBT amplifier

被引：2
|
作者：
Tanaka, H [1 ]
Suematsu, E [1 ]
Handa, S [1 ]
Motouchi, Y [1 ]
Takahashi, N [1 ]
Yamada, A [1 ]
Matsumoto, N [1 ]
Sato, H [1 ]
机构：
[1] Sharp Co Ltd, Adv Technol Res Labs, Tenri, Nara 6328567, Japan
来源：
GAAS IC SYMPOSIUM, TECHNICAL DIGEST 2001 | 2001年
关键词：
D O I：
10.1109/GAAS.2001.964351
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this paper we present a 60GHz-band high-gain MMIC cascode amplifier with InGaP/GaAs HBTs. The cascode configuration which consists of a common-emitter HBT followed by a common-base HBT, and a virtual grounding technique using open-ended stubs is adopted to achieve a high-gain and small-size amplifier. The fabricated MMIC cascode HBT amplifier with 1.2mm x 1.3mm size shows a gain of 20dB in the 60GHz-band.
引用
收藏
页码：79 / 82
页数：4
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