The kinetics of low-temperature spatial atomic layer deposition of aluminum oxide

被引：13
|
作者：
Poodt, P. [1 ]
Illiberi, A. [1 ]
Roozeboom, F. [1 ,2 ]
机构：
[1] TNO, NL-5600 HE Eindhoven, Netherlands
[2] Eindhoven Univ Technol, NL-5600 MB Eindhoven, Netherlands
来源：
THIN SOLID FILMS | 2013年 / 532卷
关键词：
Spatial atomic layer deposition; Aluminum oxide; Low temperature; SOLAR-CELL PASSIVATION; DEVICES;
D O I：
10.1016/j.tsf.2012.10.109
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Spatial atomic layer deposition can be used as a high-throughput manufacturing technique in functional thin film deposition for applications such as flexible electronics. This, however, requires low-temperature deposition processes. We have investigated the kinetics of low-temperature (<100 degrees C) spatial atomic layer deposition of alumina from tri-methyl aluminum and water. The water partial pressure and the exposure time were identified as the critical parameters in this process. (C) 2012 Elsevier B.V. All rights reserved.
引用
收藏
页码：22 / 25
页数：4
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