The kinetics of low-temperature spatial atomic layer deposition of aluminum oxide

被引：13

作者：

Poodt, P. ^{[1
]}

Illiberi, A. ^{[1
]}

Roozeboom, F. ^{[1
,2
]}

机构：

[1] TNO, NL-5600 HE Eindhoven, Netherlands

[2] Eindhoven Univ Technol, NL-5600 MB Eindhoven, Netherlands

来源：

THIN SOLID FILMS | 2013年 / 532卷

关键词：

Spatial atomic layer deposition; Aluminum oxide; Low temperature; SOLAR-CELL PASSIVATION; DEVICES;

D O I：

10.1016/j.tsf.2012.10.109

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Spatial atomic layer deposition can be used as a high-throughput manufacturing technique in functional thin film deposition for applications such as flexible electronics. This, however, requires low-temperature deposition processes. We have investigated the kinetics of low-temperature (<100 degrees C) spatial atomic layer deposition of alumina from tri-methyl aluminum and water. The water partial pressure and the exposure time were identified as the critical parameters in this process. (C) 2012 Elsevier B.V. All rights reserved.

引用

页码：22 / 25

页数：4

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