The kinetics of low-temperature spatial atomic layer deposition of aluminum oxide

被引：13
|
作者：
Poodt, P. [1 ]
Illiberi, A. [1 ]
Roozeboom, F. [1 ,2 ]
机构：
[1] TNO, NL-5600 HE Eindhoven, Netherlands
[2] Eindhoven Univ Technol, NL-5600 MB Eindhoven, Netherlands
来源：
THIN SOLID FILMS | 2013年 / 532卷
关键词：
Spatial atomic layer deposition; Aluminum oxide; Low temperature; SOLAR-CELL PASSIVATION; DEVICES;
D O I：
10.1016/j.tsf.2012.10.109
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Spatial atomic layer deposition can be used as a high-throughput manufacturing technique in functional thin film deposition for applications such as flexible electronics. This, however, requires low-temperature deposition processes. We have investigated the kinetics of low-temperature (<100 degrees C) spatial atomic layer deposition of alumina from tri-methyl aluminum and water. The water partial pressure and the exposure time were identified as the critical parameters in this process. (C) 2012 Elsevier B.V. All rights reserved.
引用
收藏
页码：22 / 25
页数：4
相关论文
共 50 条
  • [1] Low-temperature deposition of aluminum oxide by radical enhanced atomic layer deposition
    Niskanen, A
    Arstila, K
    Ritala, M
    Leskelä, M
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2005, 152 (07) : F90 - F93
  • [2] Testing low-temperature atomic layer deposition of aluminum oxide in a 36" chamber
    Fryauf, David M.
    Phillips, Andrew C.
    Bolte, Michael J.
    Feldman, Aaron
    Tompa, Gary S.
    Kobayashi, Nobuhiko P.
    LOW-DIMENSIONAL MATERIALS AND DEVICES, 2018, 10725
  • [3] Iron oxide grown by low-temperature atomic layer deposition
    Selvaraj, Seenivasan
    Moon, Hee
    Yun, Ju-Young
    Kim, Do-Heyoung
    KOREAN JOURNAL OF CHEMICAL ENGINEERING, 2016, 33 (12) : 3516 - 3522
  • [4] Iron oxide grown by low-temperature atomic layer deposition
    Seenivasan Selvaraj
    Hee Moon
    Ju-Young Yun
    Do-Heyoung Kim
    Korean Journal of Chemical Engineering, 2016, 33 : 3516 - 3522
  • [5] Low-temperature deposition of aluminum oxide on polyethersulfone substrate using plasma-enhanced atomic layer deposition
    Yun, SJ
    Lim, JW
    Lee, JH
    ELECTROCHEMICAL AND SOLID STATE LETTERS, 2004, 7 (01) : C13 - C15
  • [6] Low-temperature atomic layer deposition of aluminum oxide scaled up to a 36" chamber for observatory optics
    Fryauf, David M.
    Phillips, Andrew C.
    Bolte, Michael J.
    Feldman, Aaron
    Tompa, Gary S.
    Kobayashi, Nobuhiko P.
    ADVANCES IN OPTICAL AND MECHANICAL TECHNOLOGIES FOR TELESCOPES AND INSTRUMENTATION III, 2018, 10706
  • [7] Low-temperature growth of ZnO nanorods in anodic aluminum oxide on Si substrate by atomic layer deposition
    Yang, Ching-Jung
    Wang, Shun-Min
    Liang, Shih-Wei
    Chang, Yung-Huang
    Chen, Chih
    Shieh, Jia-Min
    APPLIED PHYSICS LETTERS, 2007, 90 (03)
  • [8] Low-Temperature Atomic Layer Deposition of Hafnium Oxide for Gating Applications
    Shekhar, Pragya
    Shamim, Saquib
    Hartinger, Simon
    Schlereth, Raimund
    Hock, Volkmar
    Buhmann, Hartmut
    Kleinlein, Johannes
    Molenkamp, Laurens W.
    ACS APPLIED MATERIALS & INTERFACES, 2022, 14 (29) : 33960 - 33967
  • [9] Low-temperature atomic layer deposition of crystalline manganese oxide thin films
    Jin, Hua
    Hagen, Dirk
    Karppinen, Maarit
    DALTON TRANSACTIONS, 2016, 45 (46) : 18737 - 18741
  • [10] Low-temperature atomic layer deposition of copper(II) oxide thin films
    Iivonen, Tomi
    Hamalainen, Jani
    Marchand, Benoit
    Mizohata, Kenichiro
    Mattinen, Miika
    Popov, Georgi
    Kim, Jiyeon
    Fischer, Roland A.
    Leskela, Markku
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2016, 34 (01):
12345