Study of preparation of c-BN thin film in normal temperature

被引：0
|
作者：
Zhang, CY [1 ]
Zhong, XL [1 ]
Ren, HA [1 ]
Wang, JB [1 ]
Yang, GW [1 ]
机构：
[1] Xiangtan Univ, Dept Phys, Xiangtan 411105, Peoples R China
来源：
MECHANICS AND MATERIAL ENGINEERING FOR SCIENCE AND EXPERIMENTS | 2001年
关键词：
c-BN thin film; pulsed laser deposition; normal temperature; IR spectra;
D O I：
暂无
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
In this study, plasma enhanced pulsed-laser deposition is used to prepare c-BN thin film in normal temperature, with highly-pure N-2 or Ar as circumstance gas. The growth of c-BN thin film is respectively studied on such different conditions as negative substrate bias voltage, reactive gases, rf power and depositing time, Fourier Transform Infrared Spectrum (FTIR) and SEM are used to identify the structure of films, and high-quality c-BN thin film is prepared both with N-2 and Ar as the reactive gases.
引用
收藏
页码：312 / 315
页数：4
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