Effects of irradiation of energetic heavy ions on digital pulse shape analysis with silicon detectors

被引：16

作者：

Barlini, S. ^{[1
,2
]}

Carboni, S. ^{[1
,2
]}

Bardelli, L. ^{[1
,2
]}

Le Neindre, N. ^{[3
]}

Bini, M. ^{[1
,2
]}

Borderie, B. ^{[4
,5
]}

Bougault, R. ^{[3
]}

Casini, G. ^{[2
]}

Edelbruck, P. ^{[4
,5
]}

Olmi, A. ^{[2
]}

Pasquali, G. ^{[1
,2
]}

Poggi, G. ^{[1
,2
]}

Rivet, M. F. ^{[4
,5
]}

Stefanini, A. A. ^{[1
,2
]}

Baiocco, G. ^{[2
,7
]}

Berjillos, R. ^{[10
]}

Bonnet, E. ^{[6
]}

Bruno, M. ^{[2
,7
]}

Chbihi, A. ^{[6
]}

Cruceru, I. ^{[14
]}

Degerlier, M. ^{[9
]}

Duenas, J. A. ^{[10
]}

Galichet, E. ^{[4
,5
,14
]}

Gramegna, F. ^{[9
]}

Kordyasz, A.

Kozik, T. ^{[11
,12
]}

Kravchuk, V. L. ^{[9
]}

Lopez, O. ^{[3
]}

Marchi, T.

Martel, I. ^{[10
]}

Morelli, L. ^{[2
,7
]}

Parlog, M. ^{[3
,13
]}

Piantelli, S. ^{[2
]}

Petrascu, H. ^{[13
]}

Rosato, E. ^{[2
,8
]}

Seredov, V. ^{[4
,5
]}

Vient, E. ^{[3
]}

Vigilante, M. ^{[2
,8
]}

机构：

[1] Univ Florence, I-50121 Florence, Italy

[2] Ist Nazl Fis Nucl, I-50125 Florence, Italy

[3] Univ Caen, Phys Corpusculaire Lab, ENSICAEN, CNRS,IN2P3, F-14050 Caen, France

[4] Inst Phys Nucl, CNRS, IN2P3, F-91406 Orsay, France

[5] Univ Paris 11, Orsay, France

[6] GANIL, F-14021 Caen, France

[7] Univ Bologna, I-40126 Bologna, Italy

[8] Univ Naples Federico II, I-80138 Naples, Italy

[9] INFN LNL, Legnaro, Italy

[10] Huelva Univ, Huelva, Spain

[11] Univ Warsaw, PL-00325 Warsaw, Poland

[12] Jagellonian Univ, Krakow, Poland

[13] Horia Hulubei Natl Inst Phys & Nucl Engn, RO-077125 Bucharest, Romania

[14] Conservatoire Natl Arts & Metiers, F-75141 Paris 03, France

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT | 2013年 / 707卷

关键词：

Silicon detector; Radiation damage; PSA; Pulse shape discrimination; RADIATION-DAMAGE; PARTICLE IDENTIFICATION; SAMPLING TECHNIQUES; DISCRIMINATION; CHARGE; DIGITIZER;

D O I：

10.1016/j.nima.2012.12.104

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

The next generation of 4 pi detector arrays for heavy ion studies will largely use Pulse Shape Analysis to push the performance of silicon detectors with respect to ion identification. Energy resolution and pulse shape identification capabilities of silicon detectors under prolonged irradiation by energetic heavy ions have thus become a major issue. In this framework, we have studied the effects of irradiation by energetic heavy ions on the response of neutron transmutation doped (nTD) silicon detectors. Sizeable effects on the amplitude and the risetime of the charge signal have been found for detectors irradiated with large fluences of stopped heavy ions, while much weaker effects were observed by punching-through ions. The robustness of ion identification based on digital pulse shape techniques has been evaluated. (C) 2012 Elsevier B.V. All rights reserved.

引用

页码：89 / 98

页数：10

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