Algorithms for pulse shape analysis using silicon detectors

被引:10
|
作者
Liddick, S. N. [1 ,2 ,3 ]
Darby, I. G. [1 ,2 ,4 ]
Grzywacz, R. K. [1 ,2 ,5 ]
机构
[1] Michigan State Univ, Dept Chem, E Lansing, MI 48824 USA
[2] Michigan State Univ, Natl Superconducting Cyclotron Lab, E Lansing, MI 48824 USA
[3] Univ Tennessee, Dept Phys & Astron, Knoxville, TN 37919 USA
[4] IAEA, Nucl Spectrometry & Applicat Lab, Phys Sect, A-2444 Seibersdorf, Austria
[5] Oak Ridge Natl Lab, Div Phys, Oak Ridge, TN 37831 USA
基金
美国国家科学基金会;
关键词
Digital electronics; Silicon detectors; Decay spectroscopy; RESOLUTION; HPGE;
D O I
10.1016/j.nima.2011.12.034
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
The development of digital electronics and their application to nuclear spectroscopy has provided an opportunity to perform experiments beyond the technical capabilities of analog systems. The pulse-shape analysis of Si detectors is described here for the selective identification of pile-up pulses resulting from the sequential alpha decay of Xe-109 and Te-105 isotopes. A two stage offline pulse shape analysis algorithm is described which is able to detect pile-up pulses from the two alpha decays with time differences between the two individual pulses as low as 100 ns over a wide range of relative amplitudes. (C) 2011 Elsevier B.V. All rights reserved.
引用
收藏
页码:70 / 78
页数:9
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