Characterizations and Analyses of Large-Area a-Si:H/μc-Si:H Thin-Film Solar Modules for Efficiency Optimization

被引：0
|
作者：
Gau, S. C. [1 ]
机构：
[1] Solar Hitech Co Ltd, Nanchang 330099, Jiangxi, Peoples R China
来源：
IEEE JOURNAL OF PHOTOVOLTAICS | 2013年 / 3卷 / 01期
关键词：
Crystallinity; light-induced degradation (LID); plasma-enhanced chemical vapor deposition (PECVD); Raman spectrum; MICROCRYSTALLINE SILICON; CELLS;
D O I：
10.1109/JPHOTOV.2012.2227462
中图分类号：
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号：
0807 ; 0820 ;
摘要：
Light-induced degradation, quantum efficiencies, thickness uniformity, Raman spectra, and secondary ion microspectroscopy for a-Si:H/mu c-Si:H films are analyzed for 2.2 m x 2.6 m thin-film solar modules that are produced in the manufacturing line. The results of the characterization and analyses are used to optimize parameters of the process and improve efficiencies of the devices. The average of the measured total area stabilized efficiencies for 779 modules with an area of 5.7 m(2) is higher than 9.2%. The I-V curve of a 5.7 m(2) module shows a stabilized conversion efficiency higher than 9.7%.
引用
收藏
页码：72 / 76
页数：5
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