Interface defects in a-Si:H/c-Si heterojunction solar cells

被引：8

作者：

Defresne, A. ^{[1
]}

Plantevin, O. ^{[1
]}

Sobkowicz, I. P. ^{[2
,3
]}

Bourcois, J. ^{[1
]}

Roca i Cabarrocas, P. ^{[2
]}

机构：

[1] Univ Paris 11, Ctr Sci Nucl & Sci Mat, CNRS, IN2P3,UMR 8609, F-91405 Orsay, France

[2] Ecole Polytech, CNRS, Lab Phys Interfaces & Couches Minces, UMR 7647, F-91128 Palaiseau, France

[3] Total New Energies, F-92078 Paris, France

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 2015年 / 365卷

关键词：

Solar cells; Heterojunction; Irradiation defects; Semiconductors; Thin layers; PHOTOLUMINESCENCE; IMPLANTATION;

D O I：

10.1016/j.nimb.2015.04.009

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

The ability to incorporate a low concentration of defects at different near-surface or interface locations in a silicon heterojunction solar cell is reported here using argon ion implantation. Optical properties of the irradiated layers are addressed using spectroscopic ellipsometry while non-radiative recombinations through defects are addressed using photoconductance and photoluminescence measurements. Low energy ion irradiation at 1 key under fluences up to 7 x 10(13) cm(-2) induces no cell degradation while higher ion energies associated to larger penetration depths close to the amorphous/crystalline interface show increased degradation with ion fluence. This behavior allows to estimate some interface defect concentration threshold for cell degradation. (C) 2015 Elsevier B.V. All rights reserved.

引用

页码：133 / 136

页数：4

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