Temperature dependence of THz radiation from semi-insulating InP surface

被引：5
|
作者：
Nakajima, M [1 ]
Takahashi, M [1 ]
Hangyo, M [1 ]
机构：
[1] Osaka Univ, Res Ctr Superconductor Photon, Suita, Osaka 5650871, Japan
来源：
JOURNAL OF LUMINESCENCE | 2001年 / 94卷
关键词：
THz radiation; femtosecond pulse laser; semiconductor surface; temperature dependence;
D O I：
10.1016/S0022-2313(01)00351-9
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
Temperature dependence of the THz radiation from n-, p-, and semi-insulating-(SI-) InP surfaces excited by ultrashort laser pulses has been studied in detail. It is found that the polarity reversal of the waveform occurs at 120 K for SI-InP whereas it does not for n- and p-InP. This result is interpreted in terms of the crossover of the two radiation mechanisms, i.e. the current surge effect due to a built-in surface field and the photo-Dember effect: the former is effective at high temperatures and the latter is effective at low temperatures. (C) 2001 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：627 / 630
页数：4
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