Effects of oxygen plasma treatment on the surface properties of Ga-doped ZnO thin films

被引：5
|
作者：
Xue, Ya [1 ,2 ]
He, Haiping [1 ,2 ]
Jin, Yizheng [1 ,2 ]
Lu, Bin [1 ,2 ]
Cao, Hongtao [3 ]
Jiang, Jie [1 ,2 ]
Bai, Sai [1 ,2 ]
Ye, Zhizhen [1 ,2 ]
机构：
[1] Zhejiang Univ, Dept Mat Sci & Engn, State Key Lab Silicon Mat, Hangzhou 310027, Zhejiang, Peoples R China
[2] Zhejiang Univ, Cyrus Tang Ctr Sensor Mat & Applicat, Hangzhou 310027, Zhejiang, Peoples R China
[3] Chinese Acad Sci, Ningbo Inst Mat Technol & Engn NIMTE, Ningbo 315201, Zhejiang, Peoples R China
来源：
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 2014年 / 114卷 / 02期
基金：
中国国家自然科学基金; 国家高技术研究发展计划(863计划);
关键词：
INDIUM-TIN-OXIDE; TRANSPARENT; ENERGY; ANODES; METAL;
D O I：
10.1007/s00339-013-7718-z
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We report that oxygen plasma treatment significantly changes the surface properties of Ga-doped ZnO (GZO) thin films, leading to an increase of work function and a large reduction in contact angles. We attribute the increase of work function of the GZO thin films after oxygen plasma treatment to both the lowering of the Fermi level and the shift in ionization potential.
引用
收藏
页码：509 / 513
页数：5
相关论文
共 50 条
  • [31] Influence of ZnO buffer layer on the electrical, optical and surface properties of Ga-doped ZnO films
    Cheng, Hui
    Deng, Hong
    Wang, Yan
    Wei, Min
    JOURNAL OF ALLOYS AND COMPOUNDS, 2017, 705 : 598 - 601
  • [32] Influence of ZnO buffer layer on the electrical, optical and surface properties of Ga-doped ZnO films
    Deng, Hong (hdeng@uestc.edu.cn), 1600, Elsevier Ltd (705):
  • [33] Electrical and optical properties of large area Ga-doped ZnO thin films prepared by reactive plasma deposition
    Shirakata, S
    Sakemi, T
    Awai, K
    Yamamoto, T
    SUPERLATTICES AND MICROSTRUCTURES, 2006, 39 (1-4) : 218 - 228
  • [34] Influence of thermal annealing on electrical and optical properties of Ga-doped ZnO thin films
    Makino, Hisao
    Yamamoto, Naoki
    Miyake, Aki
    Yamada, Takahiro
    Hirashima, Yoshinori
    Iwaoka, Hiroaki
    Itoh, Takahiro
    Hokari, Hitoshi
    Aoki, Hisashi
    Yamamoto, Tetsuya
    THIN SOLID FILMS, 2009, 518 (05) : 1386 - 1389
  • [35] Electrical properties of ultrathin Ga-doped ZnO films on Si and ZnO
    Look, D. C.
    Wang, B.
    Leedy, K. D.
    Thomson, D. B.
    OXIDE-BASED MATERIALS AND DEVICES V, 2014, 8987
  • [36] Thickness dependence of properties Ga-doped ZnO thin films deposited by magnetron sputtering
    Mahdhi, H.
    Gauffier, J. L.
    Djessas, K.
    Ben Ayadi, Z.
    JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2017, 28 (06) : 5021 - 5028
  • [37] Stress dependent properties of Ga-doped ZnO thin films prepared by magnetron sputtering
    Li, Ying
    Huang, Qin
    Bi, Xiaofang
    JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2013, 24 (01) : 79 - 84
  • [38] Thickness dependence of properties Ga-doped ZnO thin films deposited by magnetron sputtering
    H. Mahdhi
    J. L. Gauffier
    K. Djessas
    Z. Ben Ayadi
    Journal of Materials Science: Materials in Electronics, 2017, 28 : 5021 - 5028
  • [39] The Photophysical Properties of Ga-doped ZnO Thin Films Grown by Spray Pyrolysis Method
    Worasawat, Suchada
    Taku, Miyake
    Potlog, Tamara
    Mimura, Hidenori
    JOURNAL OF INORGANIC AND ORGANOMETALLIC POLYMERS AND MATERIALS, 2020, 30 (12) : 4895 - 4904
  • [40] Effects of growth conditions on the microstructures and photoluminescence properties of Ga-doped ZnO films
    Zhou Xiao-Hong
    Yang Qing
    Zou Jun-Tao
    Liang Shu-Hua
    ACTA PHYSICA SINICA, 2015, 64 (08)
12345