Effects of oxygen plasma treatment on the surface properties of Ga-doped ZnO thin films

被引：5
|
作者：
Xue, Ya [1 ,2 ]
He, Haiping [1 ,2 ]
Jin, Yizheng [1 ,2 ]
Lu, Bin [1 ,2 ]
Cao, Hongtao [3 ]
Jiang, Jie [1 ,2 ]
Bai, Sai [1 ,2 ]
Ye, Zhizhen [1 ,2 ]
机构：
[1] Zhejiang Univ, Dept Mat Sci & Engn, State Key Lab Silicon Mat, Hangzhou 310027, Zhejiang, Peoples R China
[2] Zhejiang Univ, Cyrus Tang Ctr Sensor Mat & Applicat, Hangzhou 310027, Zhejiang, Peoples R China
[3] Chinese Acad Sci, Ningbo Inst Mat Technol & Engn NIMTE, Ningbo 315201, Zhejiang, Peoples R China
来源：
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 2014年 / 114卷 / 02期
基金：
中国国家自然科学基金; 国家高技术研究发展计划(863计划);
关键词：
INDIUM-TIN-OXIDE; TRANSPARENT; ENERGY; ANODES; METAL;
D O I：
10.1007/s00339-013-7718-z
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We report that oxygen plasma treatment significantly changes the surface properties of Ga-doped ZnO (GZO) thin films, leading to an increase of work function and a large reduction in contact angles. We attribute the increase of work function of the GZO thin films after oxygen plasma treatment to both the lowering of the Fermi level and the shift in ionization potential.
引用
收藏
页码：509 / 513
页数：5
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