Decrease of Ceramic Surface Resistance by Implantation Using a Vacuum Arc Metal Ion Source

被引：0
|
作者：
Savkin, K. P. [1 ]
Bugaev, A. S. [1 ]
Nikolaev, A. G. [1 ]
Oks, E. M. [1 ]
Kurzina, I. A. [2 ]
Shandrikov, M. V. [1 ]
Yushkov, G. Yu. [1 ]
Brown, I. G. [3 ]
机构：
[1] SB RAS, Inst High Current Elect, 2-3 Akad Skii Ave, Tomsk 634055, Russia
[2] Natl Res Tomsk Polytecn Univ, Tomsk, Russia
[3] Lawrence Berkeley Natl Lab, Berkeley, CA USA
来源：
25TH INTERNATIONAL SYMPOSIUM ON DISCHARGES AND ELECTRICAL INSULATION IN VACUUM (ISDEIV 2012) | 2012年
关键词：
INSULATORS;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The results of metal ion implantation into alumina ceramic are presented. We show that the of ceramic surface resistivity depends on the metal ion spcies used for the implantation, and decreases with increasing metal ion implantation dose, decreasing by 3 - 4 orders of magnitude from 10(12) Ohm/sq. This approach provides an effective tool for bleeding off accumulated surface charge of ceramic components that can result from interaction with charged particles flows or dielectric polarization. The method can be applied for increasing the maximum electric field hold-off of insulating surfaces in high-voltage devices.
引用
收藏
页码：554 / 557
页数：4
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