InAs Diodes Fabricated Using Be Ion Implantation

被引：6
|
作者：
White, Benjamin S. [1 ]
Sandall, Ian C. [1 ]
David, John P. R. [1 ]
Tan, Chee Hing [1 ]
机构：
[1] Univ Sheffield, Dept Elect & Elect Engn, Sheffield S1 3JD, S Yorkshire, England
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 2015年 / 62卷 / 09期
基金：
英国工程与自然科学研究理事会;
关键词：
Annealing; indium arsenide; ion implantation; photodiode; ELECTRON AVALANCHE PHOTODIODES; TEMPERATURE-DEPENDENCE; EXCESS NOISE; INSB; REDISTRIBUTION; IMPURITIES; DIFFUSION; ZN; MG;
D O I：
10.1109/TED.2015.2456434
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Be ion implantation and annealing conditions were optimized to demonstrate an effective method for selective area p-type doping in InAs. Optimized implantation and annealing conditions were subsequently utilized to produce planar InAs diodes. The Be implanted planar diodes had a superior dynamic resistance-area product and comparable dark current with n-i-p InAs mesa diodes when operated at low temperatures.
引用
收藏
页码：2928 / 2932
页数：5
相关论文
共 50 条
  • [1] Planar InAs photodiodes fabricated using He ion implantation
    Sandall, Ian
    Tan, Chee Hing
    Smith, Andrew
    Gwilliam, Russell
    OPTICS EXPRESS, 2012, 20 (08): : 8575 - 8583
  • [2] Planar InAs photodiodes fabricated using He ion implantation
    Sandall, Ian
    Tan, Chee Hing
    Smith, Andrew
    Gwilliam, Russell
    2012 IEEE PHOTONICS CONFERENCE (IPC), 2012, : 165 - +
  • [3] Planar InAs p-i-n photodiodes fabricated using ion implantation
    White, Benjamin S.
    Sandall, Ian
    Tan, Chee Hing
    2014 IEEE PHOTONICS CONFERENCE (IPC), 2014, : 352 - 353
  • [4] Planar AlN/GaN resonant tunneling diodes fabricated using nitrogen ion implantation
    Zhang, Baoqing
    Yang, Liuyun
    Wang, Ding
    Cheng, Kai
    Sheng, Bowen
    Liang, Zhiwen
    Yuan, Ye
    Shen, Bo
    Wang, Xinqiang
    APPLIED PHYSICS LETTERS, 2023, 122 (06)
  • [5] Low capacitance point diodes fabricated with focused ion beam implantation
    Bischoff, L
    Schmidt, B
    SOLID-STATE ELECTRONICS, 2003, 47 (06) : 989 - 993
  • [6] Photonics components fabricated using ion implantation
    Charbonneau, S
    Poole, P
    Aers, G
    Haysom, J
    Raymond, S
    Piva, P
    Mitchell, I
    Simpson, T
    OPTOELECTRONIC MATERIALS AND DEVICES II, 2000, 4078 : 304 - 312
  • [7] GAAS VARACTOR DIODES FOR UHF TV TUNERS FABRICATED BY ION-IMPLANTATION
    NIIKURA, I
    TOYODA, N
    SHIMURA, Y
    YOKOYAMA, S
    MIHARA, M
    HAYASHI, T
    HARA, T
    ELECTRONICS LETTERS, 1978, 14 (01) : 9 - 10
  • [8] PLANAR GUARDED AVALANCHE-DIODES IN INP FABRICATED BY ION-IMPLANTATION
    DONNELLY, JP
    ARMIENTO, CA
    DIADIUK, V
    GROVES, SH
    APPLIED PHYSICS LETTERS, 1979, 35 (01) : 74 - 76
  • [9] Photonic integrated circuits fabricated using ion implantation
    Charbonneau, S
    Koteles, ES
    Poole, PJ
    He, JJ
    Aers, GC
    Haysom, J
    Buchanan, M
    Feng, Y
    Delage, A
    Yang, F
    Davies, M
    Goldberg, RD
    Piva, PG
    Mitchell, IV
    IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 1998, 4 (04) : 772 - 793
  • [10] PASSIVATED MILLIMETER-WAVE SILICON IMPATT DIODES FABRICATED BY ION-IMPLANTATION
    LEE, DH
    WELLER, KP
    THROWER, WF
    PROCEEDINGS OF THE IEEE, 1977, 65 (02) : 272 - 273
12345