Thin film growth conditions for CVD diamond under low pressure

被引：0

作者：

Wang, JT ^{[1
]}

Liu, ZJ ^{[1
]}

Zhang, DW ^{[1
]}

Zhang, JY ^{[1
]}

Wan, YZ ^{[1
]}

机构：

[1] Fudan Univ, Dept Elect Engn, CVD Lab, Shanghai 200433, Peoples R China

来源：

1998 5TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY PROCEEDINGS | 1998年

关键词：

diamond; phase diagram; chemical vapor deposition; nitrogen; film;

D O I：

10.1109/ICSICT.1998.786189

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Non-equilibrium stationary phase diagrams for diamond growth with nitrogen addition into the reaction system were calculated and coordinate well with published experimental results. Therefore they can direct the experimental research on the subject. The effects of nitrogen addition on the deposition of diamond films were discussed by using the phase diagrams. The nitrogen addition can accelerate the deposition rate of diamond films in two aspects: enhance the CH3 concentration at the growth surface acid accelerate the abstraction of H atoms covered the growth surface sites.

引用

页码：819 / 822

页数：4

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