Influence of CVD diamond growth conditions on nitrogen incorporation

被引：45
|
作者：
Lobaev, M. A. [1 ]
Gorbachev, A. M. [1 ]
Bogdanov, S. A. [1 ]
Vikharev, A. L. [1 ]
Radishev, D. B. [1 ]
Isaev, V. A. [1 ]
Chernov, V. V. [1 ]
Drozdov, M. N. [2 ]
机构：
[1] RAS, Inst Appl Phys, Nizhnii Novgorod, Russia
[2] RAS, Inst Phys Microstruct, Nizhnii Novgorod, Russia
来源：
DIAMOND AND RELATED MATERIALS | 2017年 / 72卷
基金：
俄罗斯科学基金会;
关键词：
CVD diamond growth; Nitrogen incorporation; Delta doping; CHEMICAL-VAPOR-DEPOSITION; SINGLE-CRYSTAL DIAMOND; HOMOEPITAXIAL GROWTH; VACANCY CENTERS; HIGH-QUALITY; TEMPERATURE; WINDOWS;
D O I：
10.1016/j.diamond.2016.12.011
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Nitrogen incorporation during the process of CVD diamond synthesis was studied at different growth conditions: nitrogen flow, substrate temperature, methane content. High nitrogen concentration >10(19) cm(-3) was obtained using (100)-oriented HPHT substrates. We also demonstrated the growth of the ultra-thin nitrogen doped delta layers with peak nitrogen concentration similar to 10(19) cm(-3) and thickness similar to 3 nm. It is shown, that nitrogen delta doping allows the creation of high-density NV-center ensembles with nanometer-precision depth control. (C) 2016 Elsevier B.V. All rights reserved.
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页码：1 / 6
页数：6
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