Influence of CVD diamond growth conditions on nitrogen incorporation

被引:45
|
作者
Lobaev, M. A. [1 ]
Gorbachev, A. M. [1 ]
Bogdanov, S. A. [1 ]
Vikharev, A. L. [1 ]
Radishev, D. B. [1 ]
Isaev, V. A. [1 ]
Chernov, V. V. [1 ]
Drozdov, M. N. [2 ]
机构
[1] RAS, Inst Appl Phys, Nizhnii Novgorod, Russia
[2] RAS, Inst Phys Microstruct, Nizhnii Novgorod, Russia
基金
俄罗斯科学基金会;
关键词
CVD diamond growth; Nitrogen incorporation; Delta doping; CHEMICAL-VAPOR-DEPOSITION; SINGLE-CRYSTAL DIAMOND; HOMOEPITAXIAL GROWTH; VACANCY CENTERS; HIGH-QUALITY; TEMPERATURE; WINDOWS;
D O I
10.1016/j.diamond.2016.12.011
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Nitrogen incorporation during the process of CVD diamond synthesis was studied at different growth conditions: nitrogen flow, substrate temperature, methane content. High nitrogen concentration >10(19) cm(-3) was obtained using (100)-oriented HPHT substrates. We also demonstrated the growth of the ultra-thin nitrogen doped delta layers with peak nitrogen concentration similar to 10(19) cm(-3) and thickness similar to 3 nm. It is shown, that nitrogen delta doping allows the creation of high-density NV-center ensembles with nanometer-precision depth control. (C) 2016 Elsevier B.V. All rights reserved.
引用
收藏
页码:1 / 6
页数:6
相关论文
共 50 条
  • [1] Influence of CVD diamond growth conditions and misorientation angle on nitrogen incorporation
    Lobaev, M. A.
    Gorbachev, A. M.
    Bogdanov, S. A.
    Vikharev, A. L.
    Radishev, D. B.
    Isaev, V. A.
    Chernov, V. V.
    Drozdov, M. N.
    Yunin, P. A.
    [J]. 10TH INTERNATIONAL WORKSHOP 2017 STRONG MICROWAVES AND TERAHERTZ WAVES: SOURCES AND APPLICATIONS, 2017, 149
  • [2] Nitrogen incorporation in CVD diamond
    Iakoubovskii, K
    Adriaenssens, GJ
    Vohra, YK
    [J]. DIAMOND AND RELATED MATERIALS, 2001, 10 (3-7) : 485 - 489
  • [3] Incorporation of lithium and nitrogen into CVD diamond thin films
    Othman, M. Zamir
    May, Paul W.
    Fox, Neil A.
    Heard, Peter J.
    [J]. DIAMOND AND RELATED MATERIALS, 2014, 44 : 1 - 7
  • [4] Influence of nucleation on hydrogen incorporation in CVD diamond films
    Tang, CJ
    Neves, AJ
    Fernandes, AJS
    [J]. DIAMOND AND RELATED MATERIALS, 2002, 11 (3-6) : 527 - 531
  • [5] On nitrogen incorporation during PE-CVD of diamond films
    Vandevelde, T
    Nesladek, M
    Meykens, K
    Quaeyhaegens, C
    Stals, LM
    Gouzman, I
    Hoffman, A
    [J]. DIAMOND AND RELATED MATERIALS, 1998, 7 (2-5) : 152 - 157
  • [6] BORON INCORPORATION EFFECTS IN CVD DIAMOND FILM GROWTH
    POLO, MC
    CIFRE, J
    ESTEVE, J
    [J]. VACUUM, 1994, 45 (10-11) : 1013 - 1014
  • [7] Effect of CVD diamond growth by doping with nitrogen
    Yiming, Z.
    Larsson, F.
    Larsson, K.
    [J]. THEORETICAL CHEMISTRY ACCOUNTS, 2013, 133 (02) : 1 - 12
  • [8] Effects of nitrogen on diamond film growth by CVD
    Cao, GZ
    Schermer, JJ
    Giling, LJ
    [J]. PROCEEDINGS OF THE THIRTEENTH INTERNATIONAL CONFERENCE ON CHEMICAL VAPOR DEPOSITION, 1996, 96 (05): : 721 - 726
  • [9] Effect of CVD diamond growth by doping with nitrogen
    Z. Yiming
    F. Larsson
    K. Larsson
    [J]. Theoretical Chemistry Accounts, 2014, 133
  • [10] Influence of crystal growth conditions on nitrogen incorporation during PVT growth of SiC
    Hansen, Darren
    Loboda, Mark
    [J]. SILICON CARBIDE 2008 - MATERIALS, PROCESSING AND DEVICES, 2008, 1069 : 23 - 31