AlGaN/GaN High Electron Mobility Transistor Structures: Self-Heating Effect and Performance Degradation

被引：22

作者：

Vitusevich, Svetlana A. ^{[1
]}

Kurakin, Andrey M. ^{[2
]}

Klein, Norbert ^{[3
,4
]}

Petrychuk, Mykhailo V. ^{[5
]}

Naumov, Andrey V. ^{[6
]}

Belyaev, Alexander E. ^{[6
]}

机构：

[1] Forschungszentrum Juelich, D-52428 Julich, Germany

[2] Res Ctr Juelich, Inst Bio & Nanosyst, D-52425 Julich, Germany

[3] Forschungszentrum Julich, Inst Fuer Bio & Nanosyst IBN, D-52425 Julich, Germany

[4] Ctr Nanoelect Syst Informat Technol, D-52425 Julich, Germany

[5] Natl Taras Shevchenko Univ Kiev, Dept Radio Engn, UA-01033 Kiev, Ukraine

[6] Natl Acad Sci Ukraine, V Lashkaryov Inst Semicond Phys, UA-03028 Kiev, Ukraine

来源：

IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY | 2008年 / 8卷 / 03期

关键词：

Heating; high-electron mobility transistors (HEMTs); noise measurement; reliability; spectroscopy;

D O I：

10.1109/TDMR.2008.2001684

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper reports on the results of the experimental and numerical investigation into the self-heating effect in AlGaN/GaN heterostructures grown on sapphire and SiC substrates. It shows that temperature increase has an opposite dependence on the buffer thickness for sapphire and SiC substrates. Noise spectroscopy is also used to monitor the self-heating effect. Moreover, it is shown that the room-temperature spectra can be used to determine the activation energy of the traps. An irreversible improvement in mobility and quantum scattering time is registered after the irradiation of AlGaN/GaN heterostructures at a total dose of 1 x 10(6) rad of Co-60 gamma rays.

引用

页码：543 / 548

页数：6

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