The effect of the thermal boundary resistance on self-heating of AlGaN/GaN HFETs

被引：0

作者：

Filippov, KA ^{[1
]}

Balandin, AA ^{[1
]}

机构：

[1] Univ Calif Riverside, Dept Elect Engn, Nanodevice Lab, Riverside, CA 92521 USA

来源：

MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH | 2003年 / 8卷 / 04期

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D O I：

暂无

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We have calculated the thermal boundary resistance at the GaN/SiC, GaN/sapphire and GaN/AlN interfaces in the diffuse mismatch approximation. The obtained values were then used to examine the effect of the thermal boundary resistance on heat diffusion in AlGaN/GaN heterostructure field-effect transistors. The results show that the thermal boundary resistance at the device layer interfaces can strongly influence the temperature rise in the device channel.

引用

页数：4

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