High-Temperature Annealing by Subatmospheric-Pressure Radio-Frequency Capacitively Coupled Plasma

被引：1
|
作者：
Miyake, Masatoshi [1 ]
Yokogawa, Ken'etsu [1 ]
机构：
[1] Hitachi Ltd, Cent Res Lab, Kokubunji, Tokyo 1858601, Japan
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS | 2012年 / 51卷 / 08期
关键词：
ATMOSPHERIC-PRESSURE; ION-IMPLANTATION; DISCHARGE; ALUMINUM; GAS;
D O I：
10.1143/JJAP.51.08HB03
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
High-temperature annealing was performed by a novel annealing system using subatmospheric-pressure radio-frequency capacitively coupled plasma (SAP-CCP). The heating characteristics and stability of discharge were studied. An electrode temperature of 1900 degrees C was obtained with a stable and uniform glow-like discharge. Also, the characteristics of annealing were investigated using silicon wafers implanted with boron ions accelerated by 5 kV at doses of 2.0 x 10(15) cm(-2). The sheet resistance decreased with increasing annealing temperature in the same manner as in conventional rapid thermal annealing. As a result, a sheet resistance of 86 Omega/sq was successfully achieved at an electrode temperature of 1080 degrees C without any surface roughness. (C) 2012 The Japan Society of Applied Physics
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页数：5
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