High-Temperature Annealing by Subatmospheric-Pressure Radio-Frequency Capacitively Coupled Plasma

被引：1

作者：

Miyake, Masatoshi ^{[1
]}

Yokogawa, Ken'etsu ^{[1
]}

机构：

[1] Hitachi Ltd, Cent Res Lab, Kokubunji, Tokyo 1858601, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2012年 / 51卷 / 08期

关键词：

ATMOSPHERIC-PRESSURE; ION-IMPLANTATION; DISCHARGE; ALUMINUM; GAS;

D O I：

10.1143/JJAP.51.08HB03

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

High-temperature annealing was performed by a novel annealing system using subatmospheric-pressure radio-frequency capacitively coupled plasma (SAP-CCP). The heating characteristics and stability of discharge were studied. An electrode temperature of 1900 degrees C was obtained with a stable and uniform glow-like discharge. Also, the characteristics of annealing were investigated using silicon wafers implanted with boron ions accelerated by 5 kV at doses of 2.0 x 10(15) cm(-2). The sheet resistance decreased with increasing annealing temperature in the same manner as in conventional rapid thermal annealing. As a result, a sheet resistance of 86 Omega/sq was successfully achieved at an electrode temperature of 1080 degrees C without any surface roughness. (C) 2012 The Japan Society of Applied Physics

引用

页数：5

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