A new method for the channel-length extraction in MOSFETs with sub-2-nm gate oxide

被引：11
|
作者：
Marin, M [1 ]
Deen, MJ
de Murcia, M
Llinares, P
Vildeuil, JC
机构：
[1] CNRS, Ctr Elect & Microoptoelect Montpellier, UMR CNRS, F-34095 Montpellier 5, France
[2] STMicroelectronics, F-38926 Crolles, France
[3] McMaster Univ, Dept Elect & Comp Engn, Hamilton, ON L8S 4K1, Canada
[4] CNRS, Ctr Elect Microoptoelect Montpellier, UMR, F-34095 Montpellier 5, France
来源：
IEEE ELECTRON DEVICE LETTERS | 2004年 / 25卷 / 04期
关键词：
channel-length extraction; channel-length reduction; gate tunneling current; thin oxide MOSFETs;
D O I：
10.1109/LED.2004.825157
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A simple method to extract the effective channel length in deep-submicrometer devices with sub-2-nm gate oxide thickness is presented. The method uses the measured gate current from accumulation to strong inversion. It is easy to implement fast, and accurate.
引用
收藏
页码：202 / 204
页数：3
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