Sputtering yield and secondary electron emission coefficient (γ) of the MgO, MgAl2O4 and MgAl2O4/MgO thin film grown on the Cu substrate by using the Focused Ion Beam

We obtained sputtering yields for the MgO, MgAl2O4 and MgAl2O4/MgO films using the FIB system. MgAl2O4 protective layers have been found to have less 24 (similar to) 30% sputtering yield values from 0.24 atoms/ion up to 0.36 atoms/ion than MgO layers with the values from 0.36 atoms/ion up to 0.45 atoms/ion for irradiated Ga+ ion beam whose energies ranged from 10 keV to 14 keV. And MgAl2O4 layers have been found to have lowest sputtering yield values from 0.88 up to 0.11. It is also found that MgAl2O4/MgO and MgO have secondary electron emission coefficient(gamma) values from 0.09 up to 0.12 for Ne+ ion whose energies ranged from 50 eV to 200 eV.