AlGaN metal-semiconductor-metal ultraviolet photodetectors on sapphire substrate with a low-temperature AlN buffer layer

被引：6

作者：

Zhang, Junqin ^{[1
]}

Yang, Yintang ^{[1
]}

Jia, Hujun ^{[1
]}

机构：

[1] Xidian Univ, Minist Educ, Key Lab Wide Band Gap Semicond Mat & Devices, Xian 710071, Peoples R China

来源：

CHINESE OPTICS LETTERS | 2013年 / 11卷 / 10期

基金：

中国国家自然科学基金;

关键词：

LOW DARK CURRENT; I-N PHOTODIODES; MSM-PHOTODETECTORS; UV PHOTODETECTORS; HIGH DETECTIVITY; GAN; HETEROSTRUCTURES; VOLTAGE; MOCVD; HEMT;

D O I：

10.3788/COL201311.102304

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

Unintentionally doped AlGaN thin films are grown on c-plane (0001) sapphire substrate by metal-organic chemical vapor deposition, and low-temperature AlN is deposited onto sapphire substrate used as a buffer layer. AlGaN metal-semiconductor-metal ultraviolet photodetectors with Ni/Au interdigitated contact electrodes are then fabricated by lift-off technology. The dark current of the AlGaN photodetectors is 5.61x10(-9) A at 2-V applied bias and the peak response occurrs at 294 nm.

引用

页数：3

共 50 条

[31] Metal-semiconductor-metal ultraviolet photodetectors based on gallium nitride grown by atomic layer deposition at low temperatures
Tekcan, Burak
Ozgit-Akgun, Cagla
Bolat, Sami
Biyikli, Necmi
Okyay, Ali Kemal
OPTICAL ENGINEERING, 2014, 53 (10)
[32] Metal-semiconductor-metal AlN mid-ultraviolet photodetectors grown by magnetron reactive sputtering deposition
Chen, Lung-Chien
Fu, Ming-Song
Huang, In-Lin
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 2004, 43 (6 A): : 3353 - 3355
[33] Temperature dependence of performance of ZnO-based metal-semiconductor-metal ultraviolet photodetectors
Li, Gaoming
Zhang, Jingwen
Hou, Xun
SENSORS AND ACTUATORS A-PHYSICAL, 2014, 209 : 149 - 153
[34] Effects of radiation and temperature on gallium nitride (GaN) metal-semiconductor-metal ultraviolet photodetectors
Chiamori, Heather C.
Angadi, Chetan
Suria, Ateeq
Shankar, Ashwin
Hou, Minmin
Bhattacharya, Sharmila
Senesky, Debbie G.
SENSORS FOR EXTREME HARSH ENVIRONMENTS, 2014, 9113
[35] Metal-semiconductor-metal photodetectors using widegap semiconductor capping layer
Lee, HY
Lee, CT
PROCEEDINGS OF THE SIXTH CHINESE OPTOELECTRONICS SYMPOSIUM, 2003, : 15 - 18
[36] Nitride-based ultraviolet metal-semiconductor-metal photodetectors with low-temperature GaN cap layers and Ir/Pt contact electrodes
Chang, S. J.
Yu, C. L.
Chen, C. H.
Chang, P. C.
Huang, K. C.
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2006, 24 (03): : 637 - 640
[37] Low noise AlGaN metal-semiconductor-metal photodiodes
Monroy, E
Calle, F
Muñoz, E
Omnès, F
Gibart, P
ELECTRONICS LETTERS, 1999, 35 (03) : 240 - 241
[38] TiO2 based metal-semiconductor-metal ultraviolet photodetectors
Xue, Hailin
Kong, Xiangzi
Liu, Ziran
Liu, Caixia
Zhou, Jingran
Chen, Weiyou
Ruan, Shengping
Xu, Qian
APPLIED PHYSICS LETTERS, 2007, 90 (20)
[39] Stacked Triple Ultraviolet-Band Metal-Semiconductor-Metal Photodetectors
Lee, Ching-Ting
Liu, Yu-Hsuan
Lee, Hsin-Ying
IEEE PHOTONICS TECHNOLOGY LETTERS, 2019, 31 (01) : 15 - 18
[40] Transparent TiN electrodes in GaN metal-semiconductor-metal ultraviolet photodetectors
Chiou, YZ
Su, YK
Chang, SJ
Chen, JF
Chang, CS
Liu, SH
Lin, YC
Chen, CH
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2002, 41 (6A): : 3643 - 3645

← 1 2 3 4 5 →