AlGaN metal-semiconductor-metal ultraviolet photodetectors on sapphire substrate with a low-temperature AlN buffer layer

被引：6

作者：

Zhang, Junqin ^{[1
]}

Yang, Yintang ^{[1
]}

Jia, Hujun ^{[1
]}

机构：

[1] Xidian Univ, Minist Educ, Key Lab Wide Band Gap Semicond Mat & Devices, Xian 710071, Peoples R China

来源：

CHINESE OPTICS LETTERS | 2013年 / 11卷 / 10期

基金：

中国国家自然科学基金;

关键词：

LOW DARK CURRENT; I-N PHOTODIODES; MSM-PHOTODETECTORS; UV PHOTODETECTORS; HIGH DETECTIVITY; GAN; HETEROSTRUCTURES; VOLTAGE; MOCVD; HEMT;

D O I：

10.3788/COL201311.102304

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

Unintentionally doped AlGaN thin films are grown on c-plane (0001) sapphire substrate by metal-organic chemical vapor deposition, and low-temperature AlN is deposited onto sapphire substrate used as a buffer layer. AlGaN metal-semiconductor-metal ultraviolet photodetectors with Ni/Au interdigitated contact electrodes are then fabricated by lift-off technology. The dark current of the AlGaN photodetectors is 5.61x10(-9) A at 2-V applied bias and the peak response occurrs at 294 nm.

引用

页数：3

共 50 条

[21] Selectively-sensitive metal-semiconductor-metal photodetectors based on AlGaN/AlN and ZnCdS/GaP heterostructures
Averin, S.
Kuznetzov, P.
Zhitov, V.
Zakharov, L.
Alkeev, N.
Gladisheva, N.
PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 10, NO 3, 2013, 10 (03): : 298 - 301
[22] Picosecond dynamic response of nanoscale low-temperature grown GaAs metal-semiconductor-metal photodetectors
Joshi, RP
McAdoo, JA
APPLIED PHYSICS LETTERS, 1996, 68 (14) : 1972 - 1974
[23] Metal-semiconductor-metal photodetectors with InAlGaP capping and buffer layers
Lee, CT
Lee, HY
IEEE ELECTRON DEVICE LETTERS, 2003, 24 (09) : 532 - 534
[24] Low-temperature grown GaAs heterojunction metal-semiconductor-metal photodetectors improve speed and efficiency
Currie, Marc
Quaranta, Fabio
Cola, Adriano
Gallo, Eric M.
Nabet, Bahram
APPLIED PHYSICS LETTERS, 2011, 99 (20)
[25] Anisotropic Responsivity of AlGaN Metal–Semiconductor–Metal Photodetectors on Epitaxial Laterally Overgrown AlN/Sapphire Templates
M. Brendel
A. Knigge
F. Brunner
S. Einfeldt
A. Knauer
V. Kueller
U. Zeimer
M. Weyers
Journal of Electronic Materials, 2014, 43 : 833 - 837
[26] Deep UV Metal-Semiconductor-Metal Photodetectors Using Low-Temperature-Grown AlN Epilayer on Sapphires
Chen, Meei-Ru
Wu, Ming-Guei
Lee, Guan-Wei
Tzou, An-Jye
Liang, Yen
Kao, Hui-Ling
Chen, Jyh Shin
SENSOR LETTERS, 2013, 11 (09) : 1606 - 1610
[27] Metal-semiconductor-metal GaN ultraviolet photodetectors on Si(111)
Zhao, ZM
Jiang, RL
Chen, P
Xi, DJ
Luo, ZY
Zhang, R
Shen, B
Chen, ZZ
Zheng, YD
APPLIED PHYSICS LETTERS, 2000, 77 (03) : 444 - 446
[28] Suppression of Dark Current on AlGaN/GaN Metal-Semiconductor-Metal Photodetectors
Liu, Han-Yin
Wang, Yi-Hsuan
Hsu, Wei-Chou
IEEE SENSORS JOURNAL, 2015, 15 (09) : 5202 - 5207
[29] Fast AlGaN metal-semiconductor-metal photodetectors grown on Si(111)
Pau, JL
Monroy, E
Muñoz, E
Calle, F
Sánchez-Garcia, MA
Calleja, E
ELECTRONICS LETTERS, 2001, 37 (04) : 239 - 240
[30] Fabrication and characterization of metal-semiconductor-metal (MSM) ultraviolet photodetectors on undoped GaN/sapphire grown by MBE
Xu, HZ
Wang, ZG
Kawabe, M
Harrison, I
Ansell, BJ
Foxon, CT
JOURNAL OF CRYSTAL GROWTH, 2000, 218 (01) : 1 - 6

← 1 2 3 4 5 →