AlGaN metal-semiconductor-metal ultraviolet photodetectors on sapphire substrate with a low-temperature AlN buffer layer

被引：6
|
作者：
Zhang, Junqin [1 ]
Yang, Yintang [1 ]
Jia, Hujun [1 ]
机构：
[1] Xidian Univ, Minist Educ, Key Lab Wide Band Gap Semicond Mat & Devices, Xian 710071, Peoples R China
来源：
CHINESE OPTICS LETTERS | 2013年 / 11卷 / 10期
基金：
中国国家自然科学基金;
关键词：
LOW DARK CURRENT; I-N PHOTODIODES; MSM-PHOTODETECTORS; UV PHOTODETECTORS; HIGH DETECTIVITY; GAN; HETEROSTRUCTURES; VOLTAGE; MOCVD; HEMT;
D O I：
10.3788/COL201311.102304
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
Unintentionally doped AlGaN thin films are grown on c-plane (0001) sapphire substrate by metal-organic chemical vapor deposition, and low-temperature AlN is deposited onto sapphire substrate used as a buffer layer. AlGaN metal-semiconductor-metal ultraviolet photodetectors with Ni/Au interdigitated contact electrodes are then fabricated by lift-off technology. The dark current of the AlGaN photodetectors is 5.61x10(-9) A at 2-V applied bias and the peak response occurrs at 294 nm.
引用
收藏
页数：3
相关论文
共 50 条
  • [1] AlGaN metal-semiconductor-metal ultraviolet photodetectors on sapphire substrate with a low-temperature AlN buffer layer
    张军琴
    杨银堂
    贾护军
    Chinese Optics Letters, 2013, 11 (10) : 87 - 89
  • [2] AlGaN Metal-Semiconductor-Metal Photodetectors with Low-Temperature AlN Cap Layer and Recessed Electrodes
    Chen, Chin-Hsiang
    Chang, Shoou-Jinn
    Wu, Ming-Hsien
    Tsai, Sung-Yi
    Chien, Hsiu-Ju
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2010, 49 (04)
  • [3] Characterization of AlGaN/GaN Metal-Semiconductor-Metal Photodetectors With a Low-Temperature AlGaN Interlayer
    Lee, K. H.
    Chang, P. C.
    Chang, S. J.
    Wang, Y. C.
    Yu, C. L.
    Wu, S. L.
    IEEE SENSORS JOURNAL, 2009, 9 (5-6) : 723 - 727
  • [4] Nitride-Based ultraviolet metal-semiconductor-metal photodetectors with a low-temperature GaN layer
    J. K. Sheu
    C. J. Kao
    M. L. Lee
    W. C. Lai
    L. S. Yeh
    G. C. Chi
    S. J. Chang
    Y. K. Su
    J. M. Tsai
    Journal of Electronic Materials, 2003, 32 : 400 - 402
  • [5] Nitride-based ultraviolet metal-semiconductor-metal photodetectors with a low-temperature GaN layer
    Sheu, JK
    Kao, CJ
    Lee, ML
    Lai, WC
    Yeh, LS
    Chi, GC
    Chang, SJ
    Su, YK
    Tsa, JM
    JOURNAL OF ELECTRONIC MATERIALS, 2003, 32 (05) : 400 - 402
  • [6] Visible-blind metal-semiconductor-metal photodetectors by capping an in situ low-temperature AlN layer
    Lee, K. H.
    Chang, P. C.
    Chang, S. J.
    Yu, C. L.
    Wang, Y. C.
    Wu, S. L.
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2008, 155 (10) : J287 - J289
  • [7] AlGaN ultraviolet metal-semiconductor-metal photodetectors with low-temperature-grown cap layers
    Chang, Shoou-Jinn
    Hung, Hung
    Lin, Yi-Chao
    Wu, Ming-Hsien
    Kuan, Hon
    Lin, Ray-Ming
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2007, 46 (4B): : 2471 - 2473
  • [8] AlGaN Metal-Semiconductor-Metal Photodetectors on Planar and Epitaxial Laterally Overgrown AlN/Sapphire Templates for the Ultraviolet C Spectral Region
    Knigge, Andrea
    Brendel, Moritz
    Brunner, Frank
    Einfeldt, Sven
    Knauer, Arne
    Kueller, Viola
    Zeimer, Ute
    Weyers, Markus
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2013, 52 (08)
  • [9] Simulation of AlGaN and BGaN metal-semiconductor-metal ultraviolet photodetectors
    Hamady, Sidi Ould Saad
    PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 9, NO 3-4, 2012, 9 (3-4): : 1099 - 1104
  • [10] Anisotropic Responsivity of AlGaN Metal-Semiconductor-Metal Photodetectors on Epitaxial Laterally Overgrown AlN/Sapphire Templates
    Brendel, M.
    Knigge, A.
    Brunner, F.
    Einfeldt, S.
    Knauer, A.
    Kueller, V.
    Zeimer, U.
    Weyers, M.
    JOURNAL OF ELECTRONIC MATERIALS, 2014, 43 (04) : 833 - 837
12345