Effect of annealing temperature of Ga2O3/V films on synthesizing β-Ga2O3 nanorods

被引：1

作者：

Yang, Zhaozhu ^{[1
]}

Xue, Chengshan ^{[1
]}

Zhuang, Huizhao ^{[1
]}

Wang, Gongtang ^{[1
]}

Chen, Jinhua ^{[1
]}

Li, Hong ^{[1
]}

Qin, Lixia ^{[1
]}

Zhang, Dongdong ^{[1
]}

Huang, Yinglong ^{[1
]}

机构：

[1] Shandong Normal Univ, Inst Semicond, Jinan 250014, Peoples R China

来源：

SOLID STATE COMMUNICATIONS | 2008年 / 148卷 / 9-10期

基金：

中国国家自然科学基金;

关键词：

Gallium; Nanorods; Crystal growth; Optical properties;

D O I：

10.1016/j.ssc.2008.04.017

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

beta-Ga2O3 nanostructured materials have been obtained on Si(111) substrates by annealing the Ga2O3/V films at different temperatures. X-ray diffraction (XRD), scanning electron microscope (SEM), high-resolution transmission electron microscope (HRTEM) and photoluminescence (PL) spectrum were used to analyze the structure, morphology and optical properties of beta-Ga2O3 nanostructured films. These properties were investigated particularly as a function of annealing temperature. Our results indicate that the beta-Ga2O3 nanorods annealed at 950 degrees C have the best morphology and crystallinity. These nanorods are pure monoclinic Ga2O3 structures with lengths of about 5 mu m and diameters of about 180 rim, which is conducive to the application of nanodevices. Finally, the growth mechanism is also discussed briefly. (c) 2008 Elsevier Ltd. All rights reserved.

引用

页码：480 / 483

页数：4

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