Thickness dependence of J-V characteristic for multi-layered OLED device using numerical simulation

被引：0
|
作者：
Lee, SangGun [1 ]
Kim, HyunSuk [1 ]
Kwon, SunKap [1 ]
Lee, SeHee [1 ]
Kim, KwanSoo [1 ]
Lee, SeokJong [1 ]
Tak, YoonHeung [1 ]
机构：
[1] LG Display, OLED Dev Ctr, 191-1 Gongdan Dong, Gumi Si 730030, Gyeongsangbuk D, South Korea
来源：
IDW'11: PROCEEDINGS OF THE 18TH INTERNATIONAL DISPLAY WORKSHOPS, VOLS 1-3 | 2011年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The current density-voltage Simulation for organic light emitting diode (OLED) was performed by using the injection-limited current, bulk-limited current and interface model at hetero-junction interface. The accuracy of this simulation was represented by comparing with the results from experimental data as a variable of EML thickness of multi-layered OLED device.
引用
收藏
页码：1455 / 1458
页数：4
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