Thickness dependence of J-V characteristic for multi-layered OLED device using numerical simulation

被引：0

作者：

Lee, SangGun ^{[1
]}

Kim, HyunSuk ^{[1
]}

Kwon, SunKap ^{[1
]}

Lee, SeHee ^{[1
]}

Kim, KwanSoo ^{[1
]}

Lee, SeokJong ^{[1
]}

Tak, YoonHeung ^{[1
]}

机构：

[1] LG Display, OLED Dev Ctr, 191-1 Gongdan Dong, Gumi Si 730030, Gyeongsangbuk D, South Korea

来源：

IDW'11: PROCEEDINGS OF THE 18TH INTERNATIONAL DISPLAY WORKSHOPS, VOLS 1-3 | 2011年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The current density-voltage Simulation for organic light emitting diode (OLED) was performed by using the injection-limited current, bulk-limited current and interface model at hetero-junction interface. The accuracy of this simulation was represented by comparing with the results from experimental data as a variable of EML thickness of multi-layered OLED device.

引用

页码：1455 / 1458

页数：4

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