A Class-E Tuned W-Band SiGe Power Amplifier With 40.4% Power-Added Efficiency at 93 GHz

被引：20
|
作者：
Song, Peter [1 ]
Oakley, Michael A. [1 ]
Ulusoy, A. Cagri [2 ]
Kaynak, Mehmet [2 ]
Tillack, Bernd [2 ,3 ]
Sadowy, Gregory A. [4 ]
Cressler, John D. [1 ]
机构：
[1] Sch Elect & Comp Engn, Atlanta, GA 30332 USA
[2] IHP Microelect GmbH, D-15236 Frankfurt, Oder, Germany
[3] Tech Univ Berlin, D-10587 Berlin, Germany
[4] CALTECH, Jet Prop Lab, Pasadena, CA 91109 USA
来源：
IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS | 2015年 / 25卷 / 10期
关键词：
Millimeter wave integrated circuits (mm-wave IC); power amplifiers (PA); silicon germanium (SiGe);
D O I：
10.1109/LMWC.2015.2463231
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A W-band power amplifier with Class-E tuning in a 0.13 mu m SiGe BiCMOS technology is presented. Voltage swing beyond BVCBO is enabled by the cascode topology, low upper base resistance, and minimally overlapping current-voltage waveforms. At 93 GHz with 4.0 V bias, the peak power-added efficiency and saturated output power are measured to be 40.4% and 17.7 dBm, respectively. With the bias increased to 5.2 V, the peak power-added efficiency and saturated output power at 93 GHz are measured to be 37.6% and 19.3 dBm, respectively.
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页码：663 / 665
页数：3
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