A Class-E Tuned W-Band SiGe Power Amplifier With 40.4% Power-Added Efficiency at 93 GHz

被引：20

作者：

Song, Peter ^{[1
]}

Oakley, Michael A. ^{[1
]}

Ulusoy, A. Cagri ^{[2
]}

Kaynak, Mehmet ^{[2
]}

Tillack, Bernd ^{[2
,3
]}

Sadowy, Gregory A. ^{[4
]}

Cressler, John D. ^{[1
]}

机构：

[1] Sch Elect & Comp Engn, Atlanta, GA 30332 USA

[2] IHP Microelect GmbH, D-15236 Frankfurt, Oder, Germany

[3] Tech Univ Berlin, D-10587 Berlin, Germany

[4] CALTECH, Jet Prop Lab, Pasadena, CA 91109 USA

来源：

IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS | 2015年 / 25卷 / 10期

关键词：

Millimeter wave integrated circuits (mm-wave IC); power amplifiers (PA); silicon germanium (SiGe);

D O I：

10.1109/LMWC.2015.2463231

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A W-band power amplifier with Class-E tuning in a 0.13 mu m SiGe BiCMOS technology is presented. Voltage swing beyond BVCBO is enabled by the cascode topology, low upper base resistance, and minimally overlapping current-voltage waveforms. At 93 GHz with 4.0 V bias, the peak power-added efficiency and saturated output power are measured to be 40.4% and 17.7 dBm, respectively. With the bias increased to 5.2 V, the peak power-added efficiency and saturated output power at 93 GHz are measured to be 37.6% and 19.3 dBm, respectively.

引用

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页码：663 / 665

页数：3

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