Excitation dependent photoluminescence study of Si-rich a-SiNx:H thin films

被引：22

作者：

Bommali, Ravi Kumar ^{[1
]}

Singh, Sarab Preet ^{[1
]}

Rai, Sanjay ^{[2
]}

Mishra, P. ^{[3
]}

Sekhar, B. R. ^{[3
]}

Prakash, G. Vijaya ^{[1
]}

Srivastava, P. ^{[1
]}

机构：

[1] Indian Inst Technol, Dept Phys, Nanostech & Nanophoton Labs, New Delhi 110016, India

[2] Raja Ramanna Ctr Adv Technol, Ind Synchrotons Utilisat Div, Indore 452013, India

[3] Inst Phys, Bhubaneswar 751005, Orissa, India

来源：

JOURNAL OF APPLIED PHYSICS | 2012年 / 112卷 / 12期

关键词：

SILICON-NITRIDE FILMS; QUANTUM DOTS; NANOCRYSTALS; LIGHT; STATES;

D O I：

10.1063/1.4770375

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report photoluminescence (PL) investigations on Si-rich amorphous hydrogenated silicon nitride (a-SiNx:H) thin films of different compositions, using three different excitation lasers, viz., 325 nm, 410 nm, and 532 nm. The as-deposited films contain amorphous Si quantum dots (QDs) as evidenced in high resolution transmission electron microscopy images. The PL spectral shape is in general seen to change with the excitation used, thus emphasizing the presence of multiple luminescence centres in these films. It is found that all the spectra so obtained can be deconvoluted assuming Gaussian contributions from defects and quantum confinement effect. Further strength to this assignment is provided by low temperature (300 degrees C) hydrogen plasma annealing of these samples, wherein a preferential enhancement of the QD luminescence over defect luminescence is observed. (c) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4770375]

引用

页数：6

共 50 条

[21] RAMAN STUDIES OF A-SI-H/A-SINX AND A-SI/A-SINX SUPERLATTICES
HONMA, I
TANAKA, T
KOMIYAMA, H
TANAKA, K
AMORPHOUS SILICON TECHNOLOGY - 1989, 1989, 149 : 669 - 674
[22] Stabilization of Si rich nitride phase by swift heavy ion irradiation in non-stoichiometric a-SiNx:H thin films
Gupta, Harsh
Bommali, Ravi K.
Ghosh, S.
Srivastava, P.
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2017, 410 : 164 - 170
[23] Effect of the stoichiometry of Si-rich silicon nitride thin films on their photoluminescence and structural properties
Torchynska, T. V.
Casas Espinola, J. L.
Vergara Hernandez, E.
Khomenkova, L.
Delachat, F.
Slaoui, A.
THIN SOLID FILMS, 2015, 581 : 65 - 69
[24] Swift heavy ion irradiation induced microstructural modification and evolution of photoluminescence from Si rich a-SiNx:H
Bommali, R. K.
Ghoshi, S.
Prakash, G. Vijaya
Kanjilal, D.
Mondal, P.
Srivastava, A. K.
Srivastava, P.
MATERIALS RESEARCH EXPRESS, 2015, 2 (04):
[25] PHOTOLUMINESCENCE PROPERTIES OF A-SINX - H-ALLOYS
AUSTIN, IG
JACKSON, WA
SEARLE, TM
BHAT, PK
GIBSON, RA
PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1985, 52 (03): : 271 - 288
[26] Microstructures and Photoluminescence of a-Si:H/a-SiNx Multilayers Annealed at Different Temperature
Song, Chao
Guo, Yan Qing
Wang, Xiang
Song, Jie
Huang, Rui
MATERIALS SCIENCE AND NANOTECHNOLOGY I, 2013, 531-532 : 465 - 468
[27] PREPARATION AND PROPERTIES OF a-Si:H/a-SiNx:H SUPERLATTICE FILMS.
Wang, Zhichao
Liu, Xiangna
He, Yuliang
Wu, Rulin
Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors, 1987, 8 (01): : 94 - 98
[28] Improvement of the photoluminescence properties in a-SiNx films by introduction of hydrogen
Molinari, M
Rinnert, H
Vergnat, M
APPLIED PHYSICS LETTERS, 2001, 79 (14) : 2172 - 2174
[29] MOCVD growth of GaN films on Si-rich SiNx nanoislands patterned sapphire
Fang, Zhilai
Li, Shuping
Kang, Junyong
THIN FILM PHYSICS AND APPLICATIONS, SIXTH INTERNATIONAL CONFERENCE, 2008, 6984
[30] Development of nc-Si/a-SiNx:H Thin Films for Photovoltaic and Light-Emitting Applications
Sain, Basudeb
Das, Debajyoti
SCIENCE OF ADVANCED MATERIALS, 2013, 5 (02) : 188 - 198

← 1 2 3 4 5 →