A high-temperature thermodynamic model for metalorganic vapor phase epitaxial growth of InGaN

被引：6

作者：

Ou, J ^{[1
]}

Pan, YC

Lee, WH

Shu, CK

Lin, HC

Lee, MC

Chen, WH

Chiang, CI

Chang, H

Chen, WK

机构：

[1] Natl Chiao Tung Univ, Inst Electrophys, Hsinchu 300, Taiwan

[2] Chung Shan Inst Sci & Technol, Tao Yuan 325, Taiwan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 1999年 / 38卷 / 9A期

关键词：

high-temperature parameter; thermodynamic analysis; MOVPE; InGaN;

D O I：

10.1143/JJAP.38.4958

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A thermodynamic analysis tailored with a high-temperature parameter was performed for metalorganic vapor phase epitaxial (MOVPE) growth of InxGa1-xN alloys. Accordingly, a series of InGaN samples were prepared under various input In flow rates and growth temperatures. Theoretical results indicate that the In solid concentration tends to increase with increasing In flow rate and with decreasing temperature, whereas the metal droplets form more easily on the surface at lower growth temperatures and higher In fluxes, which are in good agreement with our experimental data.

引用

页码：4958 / 4961

页数：4

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