Polarizabilities of shallow donors in finite-barrier nanodots

被引：19
|
作者：
Peter, A. John [1 ]
机构：
[1] Govt Arts Coll, Madurai 625106, Tamil Nadu, India
来源：
SUPERLATTICES AND MICROSTRUCTURES | 2008年 / 44卷 / 01期
关键词：
nanodot; semiconductor; electron states;
D O I：
10.1016/j.spmi.2008.02.013
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
Polarizabilities of shallow donors in finite-barrier GaAs/Ga1-xAlxAs of harmonic oscillator nanodots are calculated, within the effective-mass approximation, using the Hasse variational method. The magnetic field dependence of polarizabilities and the diamagnetic susceptibilities are computed. (c) 2008 Elsevier Ltd. All rights reserved.
引用
收藏
页码：106 / 111
页数：6
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