Polarizabilities of shallow donors in finite-barrier nanodots

被引：19

作者：

Peter, A. John ^{[1
]}

机构：

[1] Govt Arts Coll, Madurai 625106, Tamil Nadu, India

来源：

SUPERLATTICES AND MICROSTRUCTURES | 2008年 / 44卷 / 01期

关键词：

nanodot; semiconductor; electron states;

D O I：

10.1016/j.spmi.2008.02.013

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Polarizabilities of shallow donors in finite-barrier GaAs/Ga1-xAlxAs of harmonic oscillator nanodots are calculated, within the effective-mass approximation, using the Hasse variational method. The magnetic field dependence of polarizabilities and the diamagnetic susceptibilities are computed. (c) 2008 Elsevier Ltd. All rights reserved.

引用

页码：106 / 111

页数：6

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