The Effect of the Growth Temperature on the Passivating Properties of the Al2O3 Films Formed by Atomic Layer Deposition on the CdHgTe Surface

被引：2
|
作者：
Gorshkov, D. V. [1 ]
Sidorov, G. Yu. [1 ]
Sabinina, I. V. [1 ]
Sidorov, Yu. G. [1 ]
Marin, D. V. [1 ]
Yakushev, M. V. [1 ]
机构：
[1] Russian Acad Sci, Rzhanov Inst Semicond Phys, Siberian Branch, Novosibirsk 630090, Russia
来源：
TECHNICAL PHYSICS LETTERS | 2020年 / 46卷 / 08期
基金：
俄罗斯科学基金会;
关键词：
CdHgTe; Al2O3; atomic layer deposition; C-Vcharacteristics; passivating coating; PLASMA;
D O I：
10.1134/S1063785020080064
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We report an experimental study of the electrical properties of the interface between the Al(2)O(3)passivating coating grown by plasma enhanced atomic layer deposition at different temperatures and thep-CdHgTe (x(CdTe)= 0.22) coating grown by molecular beam epitaxy via measuring theC-Vcharacteristics of MIS structures. It has been established that, at an Al(2)O(3)growth temperature of 200 degrees C, the concentration of acceptors in CdHgTe increases due to dissociation and, at a temperature of 80 degrees C, the spread of the insulator capacitance and built-in charge increases. The optimum temperature for growing the passivating Al(2)O(3)coating on CdHgTe lies in the range of 120-160 degrees C.
引用
收藏
页码：741 / 744
页数：4
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