The Effect of the Growth Temperature on the Passivating Properties of the Al2O3 Films Formed by Atomic Layer Deposition on the CdHgTe Surface

We report an experimental study of the electrical properties of the interface between the Al(2)O(3)passivating coating grown by plasma enhanced atomic layer deposition at different temperatures and thep-CdHgTe (x(CdTe)= 0.22) coating grown by molecular beam epitaxy via measuring theC-Vcharacteristics of MIS structures. It has been established that, at an Al(2)O(3)growth temperature of 200 degrees C, the concentration of acceptors in CdHgTe increases due to dissociation and, at a temperature of 80 degrees C, the spread of the insulator capacitance and built-in charge increases. The optimum temperature for growing the passivating Al(2)O(3)coating on CdHgTe lies in the range of 120-160 degrees C.