Dark current analysis of vertical p-i-n photodetectors on a germanium-on-insulator platform

被引：0
|
作者：
Son, Bongkwon [1 ]
Lin, Yiding [1 ,2 ]
Lee, Kwang Hong [2 ]
Tan, Chuan Seng [1 ,2 ]
机构：
[1] Nanyang Technol Univ, Sch Elect & Elect Engn, Singapore, Singapore
[2] Singapore Alliance Res & Technol SMART, Low Energy Elect Syst, Singapore, Singapore
来源：
2019 IEEE 16TH INTERNATIONAL CONFERENCE ON GROUP IV PHOTONICS (GFP 2019) | 2019年
基金：
新加坡国家研究基金会;
关键词：
photodetector; Ge-on-insulator; activation energy; direct wafer bonding;
D O I：
10.1109/group4.2019.8925924
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Dark current of vertical p-i-n photodetectors on a germanium-on-insulator platform was analyzed. The activation energy was found to be from 0.15 to 0.36 eV under reserve bias. The dark current generation was interpreted by Shockley-Read-Hall and trap-assisted-tunneling effects. This work provides the interpretation on germanium-on-insulator photodetectors and suggests the alternative to suppress the dark current generation for Si-based Ge photodetectors.
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