Luminescence spectra, efficiency, and color characteristics of white-light-emitting diodes based on p-n InGaN/GaN heterostructures with phosphor coatings

被引：9
|
作者：
Badgutdinov, M. L. [1 ]
Korobov, E. V.
Luk'yanov, F. A.
Yunovich, A. E.
Kogan, L. M.
Gal'china, N. A.
Rassokhin, I. T.
Soshchin, N. P.
机构：
[1] Moscow MV Lomonosov State Univ, Fac Phys, Moscow 119899, Russia
[2] OPTEL Ctr, Moscow, Russia
[3] Platan Res Inst, Moscow 141190, Russia
来源：
SEMICONDUCTORS | 2006年 / 40卷 / 06期
关键词：
85.60Jb;
D O I：
10.1134/S1063782606060212
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
The luminescence spectra, efficiency, and color characteristics of white-light-emitting diodes fabricated from p-n InGaN/AlGaN/GaN blue-light-emitting heterostructures grown on SiC substrates and coated with yellow-green phosphors based on the rare-earth-doped yttrium-aluminum garnets were studied. The efficiency of blue-emitting diodes is as high as 22% at a current of 350 mA and a voltage of 3.3 V. The white-emitting diodes have luminous efficiency as high as 40 lm/W and luminous flux up to 50 m at 350 mA.
引用
收藏
页码：739 / 744
页数：6
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