Efficiency enhancement of InGaN based blue light emitting diodes with InGaN/GaN multilayer barriers

被引：0

作者：

童金辉 ^{[1
]}

李述体 ^{[1
]}

卢太平 ^{[1
]}

刘超 ^{[1
]}

王海龙 ^{[1
]}

仵乐娟 ^{[1
]}

赵璧君 ^{[1
]}

王幸福 ^{[1
]}

陈鑫 ^{[1
]}

机构：

[1] Institute of Opto-electronic Materials and Technology,South China Normal University

来源：

Chinese Physics B | 2012年 / 11期

基金：

中国国家自然科学基金;

关键词：

GaN based light-emitting diode; InGaN/GaN multilayer barriers; electrostatic field;

D O I：

暂无

中图分类号：

TN312.8 [];

学科分类号：

0803 ;

摘要：

The advantages of InGaN based light-emitting diodes with InGaN/GaN multilayer barriers are studied.It is found that the structure with InGaN/GaN multilayer barriers shows improved light output power,lower current leakage,and less efficiency droop over its conventional InGaN/GaN counterparts.Based on the numerical simulation and analysis,these improvements on the electrical and the optical characteristics are mainly attributed to the alleviation of the electrostatic field in the quantum wells(QWs) when the InGaN/GaN multilayer barriers are used.

引用

页码：530 / 534

页数：5

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