An evaluation of the deposition parameters for indium sulfide (In2S3) thin films using the grey-based Taguchi method

被引：23

作者：

Wang, S. S. ^{[1
]}

Shiou, F. J. ^{[1
]}

Tsao, C. C. ^{[2
]}

Huang, S. W. ^{[3
]}

Hsu, C. Y. ^{[3
]}

机构：

[1] Natl Taiwan Univ Sci & Technol, Dept Mech Engn, Taipei, Taiwan

[2] Tahwa Univ Sci & Technol, Dept Mechatron Engn, Hsinchu, Taiwan

[3] Lunghwa Univ Sci & Technol, Dept Mech Engn, Tao Yuan, Taiwan

来源：

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING | 2013年 / 16卷 / 06期

关键词：

In2S3; Buffer layer; Optical properties; Magnetron sputtering; CHEMICAL BATH; THICKNESS DEPENDENCE; OPTICAL-SCATTERING; BUFFER LAYERS; OPTIMIZATION;

D O I：

10.1016/j.mssp.2013.06.012

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents an optimal deposition-parameter design for Indium sulfide (In2S3) thin films, using radio frequency (RF) magnetron sputtering for soda-lime glass substrates. The grey relational analysis (GRA), using the Taguchi method with an L-9 (34) orthogonal array, a signal-to-noise (SIN) ratio and an analysis of variance (ANOVA) are used to optimize the multiple performance characteristics (deposition rate and optical transmittance). The effect of the optimization of the In2S3 films' deposition parameters (RF power, sputtering pressure, substrates temperature and deposition time) on the structure, morphology and optical transmittance are studied. The results of the confirmation experiments demonstrate that the deposition rate and optical transmittance of In2S3 films is improved by using a deposition process that is optimized using the grey-based Taguchi method. (C) 2013 Elsevier Ltd. All rights reserved.

引用

页码：1879 / 1887

页数：9

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