Study of preparation parameters for indium sulfide thin films obtained by modulated flux deposition

被引：13
|
作者：
Sanz, C [1 ]
Guillén, C [1 ]
Gutiérrez, MT [1 ]
机构：
[1] CIEMAT, Dept Energia, E-28040 Madrid, Spain
来源：
THIN SOLID FILMS | 2006年 / 511卷
关键词：
semiconductors; sulphides; evaporation;
D O I：
10.1016/j.tsf.2005.11.103
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Indium sulfide (In2S3) polycrystalline thin films have been deposited on amorphous glass substrates by modulated flux deposition (MFD). The influence of different deposition parameters (elemental sources temperatures, substrate temperature, substrate angular velocity) has been studied. Structural and optical characterization has been carried out by X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), field emission scanning electron microscopy (FESEM) and optical and profilometric measurements. All the samples had a tetragonal structure (beta-In2S3) with high (103) preferential orientation. Optimized samples showed good coverage and a small-grain homogeneous microstructure. A direct optical transition was observed, with a bandgap energy (E-g) of 2.75 eV for 100-nm-thick films. (c) 2005 Elsevier B.V All rights reserved.
引用
收藏
页码：121 / 124
页数：4
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