Asymmetric capacitance-voltage characteristics of (Bi3.25La0.75)Ti3O12 thin films grown on Si

被引：0
|
作者：
Choi, T [1 ]
Kim, Y [1 ]
Lee, J [1 ]
机构：
[1] Sungkyunkwan Univ, Dept Mat Engn, Suwon 440746, South Korea
来源：
INTEGRATED FERROELECTRICS | 2001年 / 40卷 / 1-5期
关键词：
(Bi3.25La0.75)Ti3O12; MFIS; charge injection; asymmetric C-V;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Electrical properties of La modified bismuth titanate (B3.25La0.75Ti3O12) thin films for a metal-ferroelectric-insulator-semiconductor (MFIS) structure were investigated with capacitance-voltage (C-V). The MRIS structure exhibits progressively increasing C-V memory window with a sweep voltage due to ferroelectric polarization with suppressed charge injection. Moreover, the asymmetric shift of threshold voltage with a sweep voltage was observed. The flat-band voltage (V-tb2) at the negative sweep was gradually increased with a sweep voltage. The flat-band voltage (V-fbl) at the positive sweep decreased at low sweep voltages and then increased at further high voltages (i.e., V-fbl shift toward the positive direction rather than the negative direction). The asymmetric behavior of C-V characteristics was attributed to negative trapped charges by electron injection from Si.
引用
收藏
页码：1623 / 1632
页数：10
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