Fabrication of flexible optoelectronic devices based on MoS2/graphene hybrid patterns by a soft lithographic patterning method

被引：54

作者：

Kang, Min-A. ^{[1
,2
]}

Kim, Seong Jun ^{[1
]}

Song, Wooseok ^{[1
]}

Chang, Sung-jin ^{[3
]}

Park, Chong-Yun ^{[4
]}

Myung, Sung ^{[1
]}

Lim, Jongsun ^{[1
]}

Lee, Sun Sook ^{[1
]}

An, Ki-Seok ^{[1
]}

机构：

[1] Korea Res Inst Chem Technol, Film Mat Res Ctr, Yuseong POB 107, Daejeon 305600, South Korea

[2] Sungkyunkwan Univ, Dept Energy Sci, Suwon 440746, Gyeonggi Do, South Korea

[3] Chung Ang Univ, Dept Chem, Seoul 156756, South Korea

[4] Sungkyunkwan Univ, Dept Phys, Suwon 440746, Gyeonggi Do, South Korea

来源：

CARBON | 2017年 / 116卷

基金：

新加坡国家研究基金会;

关键词：

MoS2; Graphene; MoS2-graphene hybrid film; Soft-lithography; Photodetector; 2-DIMENSIONAL MATERIALS; GRAPHENE; MOS2; PHOTODETECTORS; GROWTH;

D O I：

10.1016/j.carbon.2017.02.001

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

A cross-stacking MoS2/graphene hybrid patterns for the application to advanced flexible opto-electronic devices have been demonstrated by soft-lithographic patterning method. Well-defined MoS2/graphene hybrid pattern was fabricated simply by a soft lithographic patterning technique. In-depth exploration for the optical properties of diverse cross-stacking photodetectors based on MoS2/graphene patterns was carried out. In addition, cross-stacking MoS2/graphene was demonstrated onto a flexible polyethylene terephthalate (PET) substrate for the analysis of physical properties of devices. Substantially, this method should pave the way for realistic applications of transparent and flexible nano-electronic devices based on 2D materials. (C) 2017 Elsevier Ltd. All rights reserved.

引用

页码：167 / 173

页数：7

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